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Fujitsu Unveils New Flash Memory Products

128-Mbit Burst Mode Flash and 8-Mbit Super CSP Flash,
Each with 1.8 V Single-Cell Power

Tokyo, April 10, 2003 - Fujitsu Limited today announced the release of two new low-voltage (1.8V) flash-memory products that respond to mobile communications devices' growing needs for greater storage capacity, high-speed operation and lower power consumption. The MBMN29BS12DH is a NOR-type 128-Mbit product with burst mode functionality for use in mobile devices. The MBM29SL800TE and MBM29SL800BE are NOR-type 8-Mbit products employing Super Chip Size Package (Super-CSPTM) packaging technology for use in wireless communications modules, such as Bluetooth, and for ultra-compact mobile devices.

Product Pricing and Availability

Product Pricing (excl tax) Shipment dates (samples)
MBM29BS12DH 4,000 yen April 10, 2003
MBM29SL800TE 400 yen April 10, 2003
MBM29SL800BE 400 yen April 10, 2003
Sales Targets
MBM29BS12DH: 1 million units/month
MBM29SL800TE/MBM29SL800BE: 100,000 units/month (combined)

Main Features of the MBM29BS12DH

  1. High-speed read operations

    After power-up, the time it takes to output data starting from a fixed address is 46 nanoseconds (when operating at 80 MHz in handshake mode). Access time in burst mode is 8.5 nanoseconds (when operating at 80 MHz). Optimal burst mode can be selected based on configuration-register setting.

  1. Low power demands

    Burst access read operation is carried out by restricting the number of sense amplifiers to two-word access, resulting in a product that requires less power than similar models from other companies. In standby mode, this product requires only about one-twentieth the power of models from other companies.

Main features of the MBM29SL800TE/ MBM29SL800BE

  1. Packaged using ultra-compact Super-CSPTM.

    The use of Super-CSP packaging reduces footprint. Compared to single-chip packaging, it also simplifies handling, thereby increasing board level reliability.

  1. High-speed access

    Access time at 1.8V is 90 nanoseconds.

Main Specifications

0.13 µm CMOS 0.23 µm CMOS
Cell structure 2-layer polysilicon NOR-type
memory cells
2-layer polysilicon NOR-type memory cells
Power source 1.65 to 1.95V 1.65 to 1.95V
Capacity 128 Mbit 8 Mbit
I/O structure X16 x8/x16
Bank structure
(4-bank structure)
Bank A: 16 Mbit
Bank B: 48 Mbit
Bank C: 48 Mbit
Bank D: 16 Mbit

Automatic-sleep mode: standby
current: 10 µA (max)
Standby current: 0.2 µA (typ)
Read operation: 30 mA (max)
(Burst-mode, f=80 MHz)
Write/delete operation: 40 mA (max)
Automatic-sleep mode: standby current: 5 µA (max)
Standby current: 1 µA (typ)
Read operation: 20 mA (max)
(Word-mode, f=10 MHz)
Write/delete operation: 25 mA (max)
Rewrite cycles 100,000 (min) 100,000 (min)
Packaging Standard 80-ball FBGA Standard 45-ball Super CSP
Other features Acceleration
Burst suspension
Handshake mode

Trademark notice

All product names and company names mentioned herein are the trademarks or registered trademarks of their respective firms.

About Fujitsu
Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, high-reliability/performance computing and telecommunications platforms, and a worldwide corps of systems and services experts make Fujitsu uniquely positioned to unleash the infinite possibilities of the broadband Internet to help its customers succeed. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 5 trillion yen (about US$38 billion) for the fiscal year ended March 31, 2002. For more information, please see:

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Downloadable high-resolution images

  • high-resolution imageMBM29BS12DH (JPEG 109KB)
  • high-resolution imageMBM29SL800TE/BE (JPEG 109KB)
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[Press Contacts]
Ken Watanabe, Nancy Ikehara
Fujitsu Limited
Public & Investor Relations
Tel: +81-3-3215-5259 (Tokyo)
Fax: +81-3-3216-9365
MailPress Inquiries
[Customer Contact]
Fujitsu Limited
LSI Group
System Memory Division, Technology & System Application Enabling Dept.
Tel: +81-42-532-1416 (Tokyo)

All company/product names mentioned may be trademarks or registered trademarks of their respective holders and are used for identification purpose only.
Please understand that product prices, specifications and other details are current on the day of issue of the press release, however, may change thereafter without notice.

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