2002-0109E Fujitsu Limited Fujitsu Microelectronics America, Inc.

Tokyo/San Jose, May 14, 2002 - Fujitsu Limited and Fujitsu Microelectronics America, Inc. today introduced the world's first 64Mb NOR-type flash memory products based on MirrorFlash^(TM) architecture, a new multi-bit cell technology. Four MirrorFlash products will be available on a commercial basis starting today: MBM29LP640UHM, MBM29LP641UHM, MBM29LP640ULM and MBM29LP641ULM.

Fujitsu's new MirrorFlash products respond to recent performance improvements in products such as mobile phones, laser printers, and car-navigation systems, which have brought significant increases in program size and data size requirements. This has resulted in demand for flash memory with higher speed, greater density, and smaller physical size.

Developed jointly with Advanced Micro Devices, Inc. (AMD), MirrorFlash memory architecture adopts a new multi-bit cell technology incorporating a proprietary cell design. It represents a significant improvement over the existing floating-gate single-bit cell architecture and the more advanced floating-gate multi-bit cell architecture, or so-called multi-level cell architecture. Unlike single bit floating-gate cells, the MirrorFlash architecture traps electrons on two sides of the insulated layer of a single physical cell, forming two electron "spots" and thereby enabling a cell to store two bits of data. In addition, compared with the single-bit and multi-bit floating gate architectures, the new cells are easier to produce, and cell size can be reduced. Thus, using stable, existing process technology, it is possible to rapidly achieve larger density comparable to that of chips produced with next-generation process technology. The new architecture is also more reliable than the multi-level cell architecture, because electrons are trapped in a fixed location on the insulating layer.

The new products use a 2-bits-per-cell architecture to achieve quick read performance of 90 ns (nanoseconds) initial access and 25-ns page-mode access. These products feature 32-byte or 16-word simultaneous write-buffer programming for greatly improved write performance. They also offer Hi-ROM security to prevent unauthorized copying, and an accelerator to shorten write times to 60 percent of previously typical write times when loading the system. The new products work with the same command sequences as Fujitsu's other flash memory products. They are pin-compatible with the company's MBM29DL family products, which are designed with the floating-gate single bit cell architecture, and customers can make the transition to high-density MirrorFlash products without major design changes.

Fujitsu's MirrorFlash family will be extended with 128 megabit or greater density models. In addition, the company will continue to develop faster conventional single-bit cell floating gate products using the latest process technologies. In this way, Fujitsu will be able to rapidly respond to a wide spectrum of customer application needs with regard to density and performance.

Main Specifications:
Process technology: 0.23 µm CMOS process
Cell architecture: Single-layer polysilicon gate, MirrorFlash memory cell
Operating voltage: 2.7-3.6 V
Density: 64 Mbit
I/O organization: x8/x16
Sector organization: 64 Kbyte x 128 (byte mode); 32 Kword x 128 (word mode)
Sector architecture: Uniform sector
Interface: Common Flash Memory Interface (CFI)
Write-protection installed:

MBM29LP640UHM, MBM29LP641UHM: protection in highest 64 KB (32 Kword) address sector MBM29LP640ULM, MBM29LP641ULM: protection in lowest 64 KB (32 Kword) address sector

Hi-ROM included
High-speed page-mode times:

Initial access time: max 90 ns/110 ns Page-mode access time: max 25 ns/30 ns /CE access time: max 90 ns/110 ns /OE access time: max 25 ns/30 ns

Low-voltage operation:

Automatic sleep mode included Standby current: std 1 mA Operating current, read: avg 50 mA (word-mode, @ 5 MHz) Operating current, program/erase : avg 30 mA

Program/Erase cycles: min 100,000
Packaging:

MBM29LP640UHM, MBM29LP640ULM: 56-pin plastic TSOP MBM29LP641UHM, MBM29LP641ULM: 48-pin plastic TSOP

About Fujitsu
Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, high-reliability/performance computing and telecommunications platforms, and a worldwide corps of systems and services experts make Fujitsu uniquely positioned to unleash the infinite possibilities of the broadband Internet to help its customers succeed. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 5 trillion yen (about US$38 billion) for the fiscal year ended March 31, 2002. For more information, please see: http://www.fujitsu.com/

About Fujitsu Microelectronics America
Fujitsu Microelectronics America, Inc. designs, markets and supports a broad range of semiconductors and electronic devices. For product information, call 1-800-866-8608, or visit the company web site at http://www.fma.fujitsu.com/

[Press Contacts] Chiaki Kuwahara, Nancy Ikehara Fujitsu Limited, Public & Investor Relations Tel: +81-3-3215-5259 (Tokyo) Fax: +81-3-3216-9365 Press Inquiries Emi Igarashi Fujitsu Microelectronics America, Inc. Tel: +1-408-922-9104 (San Jose) emi.igarashi@fma.fujtisu.com Dick Davies IPRA Tel: +1-415-777-4161 ipra@mindspring.com

[Customer Contact] System Memory Division, Technology & System Application Enabling Dept. Fujitsu Limited Tel: +81-42-532-2445 e-mail: edevice@fujitsu.com

Please understand that product prices, specifications and other details are current on the day of issue of the press release, however, may change thereafter without notice.