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Fujitsu Limited

Fujitsu Unveils Two New Enhanced Mobile FCRAMTM Devices
with Burst Mode Functionality

- Complies with Common Specifications for Mobile RAM (COSMORAM) -

Tokyo, May 14, 2003 -- Fujitsu Limited today announced the release of two new mobile FCRAMTM (*1) devices that adopt burst mode(*2) read/write operations in compliance with the Common Specifications for Mobile RAM (COSMORAM*3). The new Mobile FCRAMs, the MB82DBS02163C and MB82DBS04163B, offer design versatility and enhanced high-speed performance.

Product Availability

ProductShipment Dates (samples)
MB82DBS02163CMay 14, 2003
MB82DBS04163BMay 14, 2003

Sales Target
500,000 units/month (for each product)


Main features of the new Mobile FCRAM devices

  1. High-speed access (burst mode)
  • Consecutive read/write operation through synchronization of system clocks
  • Maximum 12 nanoseconds (ns) clock access time in burst read mode (@66MHz)
  • Operational in asynchronous page mode, retaining functionality for today's design infrastructure. Maximum 20 ns page access time.
  1. Low power consumption
  • 1.8V power supply voltage and low standby current of 80µA (for 32Mbit products)/120µA (for 64Mbit products)
  • User-configurable power-down function (sleep mode, partial power-down mode) reduces standby current

Main specifications of new Mobile FCRAM devices

Density32 Megabits64 Megabits
I/O configurationx16x16
Supply voltage1.65 to 1.95V1.65 to 1.95V
Burst frequency (read latency: 5)66MHz66MHz
Initial access time (max.)70 ns70 ns
Clock access time (max.)12 ns12 ns
Page access time (max.)20 ns20 ns
Active current (max.)30 mA30 mA
Standby current (max.)80 µA120 µA
Power down current (max.)10µA10µA

Product Overview

The new Mobile FCRAMs (32 Mbit and 64 Mbit devices), designed for use in third generation mobile phones, newly adopt Burst Mode functionality, offering significant performance improvements. Burst Mode enables cell phone designers to satisfy the growing memory requirements and high data rates demanded by mobile phone applications, such as video data streaming and multimedia services.

The new devices' Burst Mode operation is designed to be compatible with Burst Read operation of flash memory. Burst Mode Mobile FCRAMs will be available as a stand-alone chip or mounted in a stacked Multi Chip Package (MCP) together with a Fujitsu flash memory product in the form of a Burst Mode MCP. In addition, depending on the customer's packaging requirements, the product can be shipped in either chip or wafer form.

Fujitsu plans to develop future generations of burst mode mobile FCRAMs with burst frequency up to 80MHz/100MHz and memory densities up to 128 Mbits, corresponding with the performance needs demanded by wireless video data transmission applications for mobile phones.

FCRAM (Fast Cycle Random Access Memory): Fujitsu's unique core technology with features of high-speed and low power-consumption
Burst Mode: An operation mode that enables consecutive read/write of data by synchronizing to external clock
Common Specifications for Mobile RAM (COSMORAM): Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.

About Fujitsu
Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003. For more information, please see:

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