Fujitsu Unveils Two New Enhanced Mobile FCRAM^TM Devices
with Burst Mode Functionality

Tokyo, May 14, 2003 -- Fujitsu Limited today announced the release of two new mobile FCRAM^TM (*1) devices that adopt burst mode(*2) read/write operations in compliance with the Common Specifications for Mobile RAM (COSMORAM*3). The new Mobile FCRAMs, the MB82DBS02163C and MB82DBS04163B, offer design versatility and enhanced high-speed performance.

Product Availability Product Shipment Dates (samples) MB82DBS02163C May 14, 2003 MB82DBS04163B May 14, 2003 Sales Target 500,000 units/month (for each product)

MB82DBS04163B

Main features of the new Mobile FCRAM devices

1. High-speed access (burst mode)

• Consecutive read/write operation through synchronization of system clocks
• Maximum 12 nanoseconds (ns) clock access time in burst read mode (@66MHz)
• Operational in asynchronous page mode, retaining functionality for today's design infrastructure. Maximum 20 ns page access time.

2. Low power consumption

• 1.8V power supply voltage and low standby current of 80µA (for 32Mbit products)/120µA (for 64Mbit products)
• User-configurable power-down function (sleep mode, partial power-down mode) reduces standby current

Main specifications of new Mobile FCRAM devices

Product Overview

The new Mobile FCRAMs (32 Mbit and 64 Mbit devices), designed for use in third generation mobile phones, newly adopt Burst Mode functionality, offering significant performance improvements. Burst Mode enables cell phone designers to satisfy the growing memory requirements and high data rates demanded by mobile phone applications, such as video data streaming and multimedia services.

The new devices' Burst Mode operation is designed to be compatible with Burst Read operation of flash memory. Burst Mode Mobile FCRAMs will be available as a stand-alone chip or mounted in a stacked Multi Chip Package (MCP) together with a Fujitsu flash memory product in the form of a Burst Mode MCP. In addition, depending on the customer's packaging requirements, the product can be shipped in either chip or wafer form.

Fujitsu plans to develop future generations of burst mode mobile FCRAMs with burst frequency up to 80MHz/100MHz and memory densities up to 128 Mbits, corresponding with the performance needs demanded by wireless video data transmission applications for mobile phones.

(*1)

FCRAM (Fast Cycle Random Access Memory): Fujitsu's unique core technology with features of high-speed and low power-consumption

(*2)

Burst Mode: An operation mode that enables consecutive read/write of data by synchronizing to external clock

(*3)

Common Specifications for Mobile RAM (COSMORAM): Common specifications for next generation mobile pseudo SRAM user interface announced by Fujitsu, NEC Electronics, and Toshiba on February 17, 2003.

About Fujitsu
Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003. For more information, please see: http://www.fujitsu.com/

[Press Contacts] Press Inquiries

[Customer Contact] Fujitsu Limited. FCRAM & ASSP AE ASIC Marketing & Application Engineering Dept. ASIC, Network and Communication Products Div. LSI Group Tel: +81-42-532-1416 E-mail:edevice@fujitsu.com

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