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2001-0273E

Fujitsu Introduces Two-Stack MCP for Mobile Phones:
"9mm x 9mm Series"

-Standardization of MCP Packaging Reduces Development Workload of Designers-

9mm x 9mm Series Tokyo, December 13, 2001 - Fujitsu Limited today announced that it has developed the 9mm x 9mm Series, a stacked MCP that combines two essential chips used in mobile phones, flash memory and RAM (either mobile FCRAM or SRAM), into one 9mm x 9mm, 65-ball PBGA (*1) package.

There are four products in the new series: a 64-Mb NOR-type dual-operation flash memory chip with either an 8Mb SRAM chip or a 16Mb/32Mb/64Mb mobile FCRAM chip (*2) with an asynchronous SRAM interface. The new series goes on sale starting today.

Recent advances in mobile phone technology, driven by improved functionality and the addition of new services, have generated demand for memory with optimum levels of functionality and capacity. However, there is no standardization in the packaging of the chips that power them. If there are any changes required in the memory capacity of the chips during the product development phase, the memory-device mounted area of the printed circuit board would need to be redesigned, resulting in large additional costs and time delays.

To solve this problem, Fujitsu developed the two-chip stacked MCP "9mm x 9mm Series," which standardizes the memory packages for mobile phones. If there are any sudden changes to the specifications of a mobile phone during the product development phase, designers can simply mount an MCP with the required combination of memory capacity and functions, without having to redesign the board area mounted with the memory device, thereby reducing the time and costs of development and design work.

In addition, for a combination of 64-Mb of flash memory with a 16-Mb FCRAM, Fujitsu's new MCP reduces the total mounted surface area to as much as 61% (*3) of the previous packages.

For storing data and programs, Fujitsu's new MCP uses flash memory that was fabricated using 0.17-micron process technology. This flash memory runs faster than previous NOR-type products, performing sector erase operations in 0.2 seconds (one second for previous models), with access speeds of 70 ns (80 ns for previous models) and significantly improved electrical features.

The MCP also includes 16-Mb/32-Mb/64-Mb of Fujitsu's proprietary mobile FCRAM and 8-Mb SRAM. The 16-Mb/32-Mb/64-Mb FCRAM is Application Specific Memory (*4) for mobile phones that offers access speeds of 80ns/70ns/70ns, standby current of 70µA /100µA /150µA, and power down current of just 10µA, thereby combining high speeds with low power consumption.

Sales Target:Two million units/month (all four products combined)
Availability:Starting December 13, 2001
Sample Pricing (tax not included):MB84VD23381FJ 3,500 yen
MB84VD23481FJ 5,000 yen
MB84VD23581FJ 6,000 yen
MB84VD23280FA 4,500 yen
Specifications
  1. Components:
    MB84VD23381FJ : 64-Mb Flash Memory / 16-Mb mobile FCRAM
    MB84VD23481FJ : 64-Mb Flash Memory / 32-Mb mobile FCRAM
    MB84VD23581FJ : 64-Mb Flash Memory / 64-Mb mobile FCRAM
    MB84VD23280FA : 64-Mb Flash Memory / 8-Mb SRAM

  2. Access times:
    Address access:Max. 70 ns (64-Mb flash memory)
    Read access:Max. 80 ns (16-Mb mobile FCRAM)
    Max. 70 ns (32-Mb/64-Mb mobile FCRAM)
    Max. 70 ns (8-Mb SRAM)
    Erase time:Standard 0.2 sec./sector (64-Mb flash memory)

  3. Power supply:Vcc = 2.7 - 3.1V

  4. Power requirements:
    Standby:Max. 5 µA (64-Mb flash memory)
    Max. 70 µA (16-Mb mobile FCRAM)
    Max. 100 µA (32-Mb mobile FCRAM)
    Max. 150 µA (64-Mb mobile FCRAM)
    Max. 15 µA (8-Mb SRAM)
    Power-down mode:Max. 10 µA (16/32/64-Mb mobile FCRAM)
    Partial power-down (*5):Max. 70 µA (when retaining 8-Mb of data) (32-Mb mobile FCRAM)
    Max. 85 µA (when retaining 16-Mb of data) (64-Mb mobile FCRAM)
    Read:Max. 18 mA (64-Mb flash memory operating at 5 MHz)
    Max. 20 mA (16-Mb mobile FCRAM)
    Max. 25 mA (32/64-Mb mobile FCRAM)
    Max. 40 mA (8-Mb SRAM operating at 10 MHz)
    Write/erase:Max. 35mA (64-Mb flash memory)
    Erase/Write repetitions:100,000 times (64-Mb flash memory)

  5. Packaging: JEDEC standard 65-ball PBGA (56 signal balls; 9 reinforced balls), 0.8mm ball pitch

Glossary
*1 PBGA (Plastic Ball Grid Array):
A type of plastic packaging used for surface mounting.

*2 Mobile FCRAM (Fast Cycle Random Access Memory):
FCRAM is a next-generation memory core technology developed by Fujitsu. Designed to provide reduced power consumption for mobile information terminals, mobile FCRAM utilize this technology and incorporate asynchronous SRAM-type interfaces.

*3
Compared to the MB84VD23381EJ embedded with 64-Mb flash memory and 16-Mb mobile FCRAM; package size of 11mm x 12 mm.

*4 ASM (Application Specific Memory):
Refers to a memory product intended for a specific application. Fujitsu provides its customers with solutions tailored to their application needs, equipping FCRAM cores with capacity, function, performance and interfaces optimized for specific types of applications.

*5 Partial Power Down:
An operating mode that reduces power consumption. A certain portion of the capacity (8-Mb for 32-Mb Mobile FCRAM; 16-Mb for 64-Mb Mobile FCRAM) goes into standby mode (data is retained), while power goes down for the remainder of the capacity (24-Mb for 32-Mb Mobile FCRAM; 48-Mb for 64-Mb Mobile FCRAM; data is not retained). Makes possible greater reduction in power consumption than ordinary standby mode.
Trademarks
FCRAM is a registered trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.


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About Fujitsu
Fujitsu is a leading provider of Internet-focused information technology solutions for the global marketplace. Its pace-setting technologies, best-in-class computing and telecommunications platforms, and worldwide corps of systems and services experts make it uniquely positioned to unleash the infinite possibilities of the Internet to help its customers succeed. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 5.48 trillion yen for the fiscal year ended March 31, 2001.
Internet: http://www.fujitsu.com/
Press Contacts: Customer Contacts:
Chiaki Kuwahara, Nancy Ikehara
Fujitsu Limited, Public Relations
Tel: +81-3-3215-5259 (Tokyo)
Fax: +81-3-3216-9365
E-mail: pr@fujitsu.com
Fujitsu Limited, Electronic Devices Group
System Memory Division
Tel: +81-42-532-1399 (Tokyo)
E-mail: edevice@fujitsu.com

Please understand that product prices, specifications and other details are current on the day of issue of the press release, however, may change thereafter without notice.

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