FUJITSU global
HomeNewsInvestor RelationsAboutServicesProductsSite MapWorldwide Japanese
Quick Search help
DownloadShopSupport
Home > News Room > Release Japanese Release
Press Contacts | Customer Contacts | Product Information

2001-0239

Fujitsu Introduces 128 Megabit NOR-type Flash Memory

Adopts Advanced 0.17 Micron Process with 32-bit Data Transfer
for High-Speed, High-Function Performance

MBM29PDL1280F Tokyo, November 15, 2001---Fujitsu Limited today unveiled a new, 128-megabit NOR-type(*1) flash memory device, the MBM29PDL1280F. Manufactured using advanced 0.17 micron process technology and developed in collaboration with Advanced Micro Devices (AMD) of the U.S., the new device boasts high-speed 32-bit data transfer and incorporates page-mode(*2) and dual operation(*3) functionality.

In recent years there have been major advances in the processing speeds of such appliances as car-navigation systems, printers and mobile phones, as well as increasing functionality for communications devices. This has created demand for faster processors used in such systems, and data transfer speeds are moving from the 8-bit/16-bit to 16-bit/32-bit and even 64-bit. Likewise, for flash memory, there has been a corresponding demand for wider data bus to support higher speed and larger data volumes.

Fujitsu's new device is designed for faster read speed, achieving 25 nanoseconds (in page-mode), the fastest of any 128-Mbit device. In addition, by expanding the data bus from 8-bit/16-bit to 16-bit/32-bit, larger blocks of data can be processed at one time, thereby improving ease of integration with microprocessors used in electronic products. Furthermore, the adoption of the dual operation function enables the device to simultaneously perform read/write/erase operations, and the inclusion of the acceleration(*4) feature allows faster writing of large data volumes on to flash memory prior to mounting on the printed circuit board.

Fujitsu has also included a number of security functions, including Hi-ROM(*5), which prevents illegal copying of large files, write-protect(*6) hardware-based protection of the boot-block sectors (where system software is located), and new sector protection(*7).

The new product will be manufactured at the JV3 facility at Fujitsu-AMD Semiconductor Ltd., a joint venture between Fujitsu and AMD, located in Aizu-Wakamatsu, Japan. This facility began producing 64-Mbit dual operation flash earlier this month.

Sample pricing:6,000 yen, excluding tax, for SSOP(*8)
Availability:Samples from November 15, 2001
Volume production starting March 2002
Sales target:One million units/month

[Specifications]

Process:0.17 micron CMOS
Cell design:Two-layer polysilicon, NOR-type memory cell
Output:8M x 16-bit / 4M x 32-bit (128-Mbit)
Dual-operation mode
Bank design (four-bank structure)
: Bank A: 16-Mbit;
Bank B: 48-Mbit;
Bank C: 48-Mbit;
Bank D: 16-Mbit
HI-ROM:256-byte HI-ROM region
WP#/ACC (write-protection/acceleration):included
New sector protection:included
Common flash-memory interface (CFI):supported
Access times:
Address (standard):70/80 ns (max.)
Address (paged):25/30 ns (max.)
CE#:70/80 ns (max.)
OE#:25/30 ns (max.)
Standard power requirements:2.7V - 3.6 V
Low-power consumption:automatic sleep mode included
Standby power:5 micron A (max.)
Read mode:60 mA (max.) assuming word-mode, f=10 MHz
Write mode:35 mA (max.)
Erase/write cycles:100,000 (min.)
Packaging:Standard 90-pin plastic SSOP(*8)
Standard 96-ball FBGA(*9)

[Glossary]
*1
NOR-type flash memory: the most common type of flash memory. Supports high-speed random access reads with the parallel NOR memory cell architecture.
*2
Page-mode: enables fast reads based on a partial address.
*3
Dual operation: permits simultaneous read/write/erase operations.
*4
Acceleration: shortens data-write time when applying high voltage, for faster write operations than usual.
*5
Hi-ROM (Hidden Read-Only Memory): a region of memory used for security codes and fixed data.
*6
Write protection: provides hardware-level protection to the sectors above and below a given address from inadvertent rewrites.
*7
New sector protection: In addition to the existing sector-protection technique based on applied high voltage, this new type of sector protection makes it possible to protect all sectors and preserve the data already written to them by simply entering a set command.
*8
SSOP (Shrink Small-Outline Package): A type of surface mount type package.
*9
FBGA (Fine-Pitch Ball Grid Array): a type of surface mount type package that uses ball-shaped terminals with spacing of less than 0.8 mm.
* All company/product names mentioned may be trademarks or registered trademarks of their respective holders and are used for identification purpose only.

Top of Page


About Fujitsu
Fujitsu is a leading provider of Internet-focused information technology solutions for the global marketplace. Its pace-setting technologies, best-in-class computing and telecommunications platforms, and worldwide corps of systems and services experts make it uniquely positioned to unleash the infinite possibilities of the Internet to help its customers succeed. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 5.48 trillion yen for the fiscal year ended March 31, 2001.
Internet: http://www.fujitsu.com/

Press Contacts: Customer Contacts:
 Chiaki Kuwahara, Nancy Ikehara
 Fujitsu Limited, Public Relations
 Tel: +81-3-3215-5259 (Tokyo)
 Fax: +81-3-3216-9365
 E-mail: pr@fujitsu.com
 Fujitsu Limited, Electronic Devices Group
 System Memory Division
 Tel: +81-42-532-1399 (Kawasaki)
 e-mail: edevice@fujitsu.com

Please understand that product prices, specifications and other details are current on the day of issue of the press release, however, may change thereafter without notice.

ContactTerms and Privacywww.fujitsu.com/
All Rights Reserved, Copyright © FUJITSU LIMITED 2001