Tokyo, May 8, 1996 --- Successfully adopting a new poly-silicon thin film transistor (TFT) structure on glass substrates using low temperature process, Fujitsu Laboratories Ltd. has developed the world's first SXGA (Super eXtended Graphics Array) TFT-LCD (Liquid Crystal Display) panels.
The 3.2 inch-diagonal super-high-resolution displays feature 1.3 million pixels (1280 x 1024; pixel pitch of 50 um) and fully integrated peripheral driver circuits.
The new LCD panels are twice as bright as current low temperature poly-Si TFT-LCDs, achieving an unprecedented aperture ratio of 60percent.

The new technology is expected to help achieve data projectors with brighter screens and lower power consumption for personal computers and engineering workstations, as well as higher resolution displays for portable information terminals. As such, Fujitsu believes that the new development marks a major step forward toward the commercial application of low temperature poly-Si technology.

The company will make a presentation on the new device at Society for Information Display '96 in San Diego from May 12 to 17, 1996.

By applying low temperature poly-silicon TFT technology -- which offers more than two order of magnitude of higher mobility than amorphous silicon TFT technology -- using standard mass-produced glass substrates, Fujitsu researchers were able to fabricate a display with an extremely high resolution and highly dense pixel structure.
Moreover, by integrating peripheral circuits on the display, they have made a major contribution to the realization of a "System-on-LCD."

Realization of a true "System-on-LCD" would make possible significant cost reductions and high reliability by reducing assembly and testing processes. And by enabling the development of LCD products with higher resolution, greater functions and more compact designs than currently possible, it is expected to make a breakthrough from simple to more functional displays.

Heretofore, maintaining stable characteristics has been required breakthrough for low-temperature poly-Si TFTs because of being fabricated from semiconductors or gate insulator processed below 600 degrees C on glass substrate as compared to high-temperature stable poly-Si TFTs processed over 1000 degrees C on quartz substrate.

By using the following new technologies, however, Fujitsu researchers were able to fabricate the new low temperature poly-Si TFT with an original process of about 500 degrees C.

1. Black Matrix, for the first time, was directly fabricated on poly-Si TFT to achieve high aperture ratios. This new structure is named a "Black Matrix on Self Aligned offset Gate TFT" structure.
   
2. TFT stability was greatly improved by developing a threshold voltage control technique using boron doping into poly-Si cannel layer.
   
3. Adoption of multi-layer aluminum wiring structure enabled development of excellent process technology for mass production.

TFT-LCD prototype specifications
- Display diagonal size: 3.2 inch
- Pixels: 1280 x 1024
- Pixel size: 50 um x 50 um
- Contrast ratio: over 100
- Aperture ratio: 60%